201203011-3 adva nced power electronics corp. 1/5 AP2609GY-HF-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com p-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d a i d a i dm d at t a =25c w/c t stg t j symbol value unit parameter rating gate-source voltage continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction temperature range -55 to 150 c thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. bv -20v small footprint, low profile r 57mw fast switching characteristics low gate charge rohs-compliant, halogen-free i -5.1a drain-source voltage -20 v 12 v at t =25c -5.1 a at t =70c -4.0 a -20 a p total power dissipation 2 w linear derating factor 0.016 rthj-a maximum thermal resistance, junction-ambient 62.5 c/w ordering information AP2609GY-HF-3tr : in rohs-compliant halogen-free sot-26 shipped on tape and reel (3000pcs/reel) d d d d g s sot-26 the sot-26 package is widely used for commercial and industrial applications, where space is at a premium. g d s
adva nced power electronics corp. 2/5 AP2609GY-HF-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: 1.pulse width limited maximum junction temperature. 2.pulse test - pulse width < 300s , duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec; 156 c/w when mounted on minimum copper pad. symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-5a - 40 57 mw v gs =-2.5v, i d =-3a - 60 100 mw v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 -0.7 -1.2 v g fs forward transconductance v ds =-5v, i d =-3a - 10 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs = 12v, v ds =0v - - 100 na q g total gate charge i d =-3a - 8.5 14 nc q gs gate-source charge v ds =-10v - 1.2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3 - nc t d(on) turn-on delay time v ds =-10v - 10 - ns t r rise time i d =-1a - 20 - ns t d(off) turn-off delay time r g =3.3w -27- ns t f fall time v gs =-5v - 22 - ns c iss input capacitance v gs =0v - 660 1050 pf c oss output capacitance v ds =-10v - 135 - pf c rss reverse transfer capacitance f=1.0mhz - 120 - pf r g gate resistance f=1.0mhz - 7.2 14.4 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-3a, v gs =0v, - 24 - ns q rr reverse recovery charge di/dt=100a/s - 11 - nc
adva nced power electronics corp. 3/5 AP2609GY-HF-3 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature ?2013 advanced power electronics corp. usa www.a-powerusa.com typical electrical characteristics 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5a v gs = -4.5v 0 4 8 12 16 0246 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.5v -2.5v v g = -2.0v 0 4 8 12 16 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) v g = -2.0v -5.0v -4.5v -3.5v -2.5v t a = 150 o c 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) i d = -250ua 40 50 60 70 80 12345 -v gs , gate-to-source voltage (v) r ds(on) (mw ) i d =-3a t a =25 o c
adva nced power electronics corp. 4/5 AP2609GY-HF-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. maximum continuous drain current vs. ambient temperature typical electrical characteristics (cont.) 0 1 2 3 4 5 6 024681 01 2 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -3a v ds =-10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 156c/w t t 0 200 400 600 800 1000 1 5 9 1 31 72 12 5 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 2 4 6 8 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v t j =-40 o c operation in this area limited by r ds(on) 0.02
adva nced power electronics corp. 5/5 AP2609GY-HF-3 ?2013 advanced power electronics corp. usa www.a-powerusa.com package dimensions: sot-26 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: laser marking product: yt = AP2609GY-HF-3 millimeters symbols min nom max a 2.70 2.90 3.10 b 2.60 2.80 3.00 c 1.40 1.60 1.80 d 0.30 0.43 0.55 e 0.00 0.05 0.10 g i j l 0.37ref 0.95ref 1.90ref 0.12ref h 1.20ref d c b l l g e j i a h ytxx xx = date/lot code for details of how to convert this to standard yyww date code format, please contact us directly.
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